Laser Doping
In a somewhat similar technique to laser Fired Contacts LFC, Laser assisted doping requires that typically, a phosohorous or boron bearing layer is deposited on the surface of the wafer. Laser pulses are then directed onto the layer. This leads to melting of the phosphorus layer and silicon allowing diffusion of the dopant into the silicon.
Replaces high temperature bulk diffusion with localized heating
Doping depth is controlled by choice of laser power and wavelength
M-Solv is an independent integrator so the optimal laser can be chosen for the required doping profile 0.1-1.0mm
Throughput depends on laser and selective emitter pattern
15mm, 3s contact positioning available for interdigitated designs
